User Blog by Daniel Payne on 24-10-2023 at 06:00 am
The blog highlights a presentation by Peter Huber of Infineon at MunEDA’s user group meeting, focusing on SRAM design optimization challenges. Traditional SRAM yield prediction methods involve computationally intensive simulations. Infineon introduces a two-step approach using Worst Case Distance (WCD) analysis, reducing simulation efforts. This method ensures accurate yield estimates by testing multiple combinations and correlating well with silicon measurements. The results indicate less than a two percent difference in Vmin values between silicon measurements and simulations, with this variance attributed to effects like IR drop.
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