Optimal NBTI Degradation and PVT Variation Resistant Device Sizing in a Full Adder Cellby Andreas Ripp17. December 201523. January 2024IEEE Authors Z. Abbas, M. Olivieri, G. Strube, A. Ripp Published in ICRITO 2015, August 2015, Noida, India Link https://ieeexplore.ieee.org/document/7359366
